RJL6012DPE switching equivalent, silicon n channel mos fet high speed power switching.
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* Built-in fast recovery diode Low on-resistance Low leakage current High speed switching REJ03G1750-0100 Rev.1.00 Oct 26, 2009
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RENESAS Pac.
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
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